“Colossal positive magnetoresistance in a doped nearly magnetic semiconductor”
- Authors
Rongwei Hu, K. J. Thomas, Y. Lee, T. Vogt, E. S. Choi, V. F. Mitrović, R. P. Hermann, F. Grandjean, P. C. Canfield, J. W. Kim, A. I. Goldman, and C. Petrovic
- Journal
Physical Review B
Vol.77, No.8, pp.085212, 2008.02 - DOI
Abstract
We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb2, a nearly magnetic or “Kondo” semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.
