We present data on the crystal structure and evolution of the electrical resistivity in lightly doped ${\mathrm{La}}_{1-x}{R}_x{\mathrm{AgSb}}_2$ ($R=\mathrm{Gd}$, Y, Ce, and Nd) at ambient pressure and in ${\mathrm{LaAgSb}}_2$ under hydrostatic pressure. The upper charge density wave transition is suppressed by both doping and pressure with substitution-related disorder being the dominant mechanism for this suppression in the former case and the anisotropic pressure dependence of the unit cell dimensions (as seen in the $c∕a$ ratio) prevailing in the latter case.