"Polymorphism of Gd5Si2Ge2: The equivalence of temperature, magnetic field, and chemical and hydrostatic pressures"
Y. Mudryk, Y. Lee, T. Vogt, K.A. Gschneidner, V.K. Pecharsky
Physical Review B
Vol.71, No.17, pp.17410, 2005.05
The atomic scale details of the pressure-induced polymorphism of Gd5Si2Ge2 have been established by in situ x-ray powder diffraction. At room temperature, the monoclinic Gd5Si2Ge2 phase (β) is transformed to the orthorhombic α−Gd5Si2Ge2, observed previously as the low temperature, high magnetic field, or high silicon content polymorph. The transition occurs between ∼10kbar and ∼20kbar. Diffraction data provide the missing link in order to achieve a more complete understanding of how a structural change in a material can be induced by a variety of thermodynamic variables.