“Quasihydrostatic versus nonhydrostatic pressure effects on the electrical properties of NiPS3”
H. Cui, S. Yun, K.J. Lee, C. Lee, S.H. Chang, Y. Lee, H.H. Lee, K. Raju, K. Moovendaran, R. Sankar, K.-Y. Choi
Physical Review Materials
Vol.5, No.12, pp.124008, 2021.12
We report combined x-ray diffraction (XRD) and electrical transport studies of the van der Waals (vdW) insulator NiPS3 to elucidate a pressure-induced insulator-to-metal transition (IMT). On application of quasihydrostatic pressure, two successive structural transitions occur at 10 and 29.4 GPa, as evidenced by the XRD and resistivity measurements. The concomitant IMT with a monoclinic-to-trigonal structural transition near 29.4 GPa turns out to be a common feature of the MPS3 family (M=transition metals). Under uniaxial-like pressure, the critical pressure for IMT is drastically reduced to P=12.5 GPa. These results showcase that the IMT is susceptible to strain and hydrostatic environments and that pressure offers a new venue to control a dimensional crossover in layered vdW materials.